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This current is generally due to the drift of charge carriers (electrons and holes) across the junction without an external forward voltage. The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, [1] although this is obviously a function of size).
The reverse saturation current is a fundamental concept in the field of semiconductor physics and electronics It is used to calculate the reverse bias current, leakage current, and temperature dependence of the diode. It is a critical parameter that affects the performance and reliability of various electronic devices, including diodes, transistors, and solar cells.
Practically no current flows due to majority carrier when the diode is reverse biased
However, a small amount of current does flow due to diffusion of minority carriers across the junction. The saturation current isn't what you measure for reverse current on the bench The real reverse current includes shunt conductances through the package and the crystal surface that the shockley equation leaves out. The minority carriers are responsible for this current.
The reverse saturation current (i0) in diode circuits is important as it affects the overall performance and characteristics of the diode
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