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然后说一下 SiGe工艺的概念：SiGe工艺（应变硅），是在制造电路结构中的双极晶体管时，在硅基区材料中加入一定含量的Ge形成应变硅异质结构晶体管，以改善双极晶体管特性的一种硅基工艺集成技术。 它的优点：具有高性能、高集成度、高成本-效益比等特点。与同尺寸普通MOSFET相比，功耗减少1/3. 咨询下相同面积下，SiGe与GaAs做的芯片，大规模量产后单价差多少？比如SiGe为130nm工艺，GaAs为.1的工艺。 I've heard that sige chips can be faster than ordinary silicon chips
What is sige and why is it faster than ordinary silicon? Die siege allradachse ist innen in der radnabe undicht GAAFET和MBCFET中的硅通道都是悬空的，既然单晶硅基底是通过定向生长实现的，无法在芯片制造过程中悬空生…
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Beim einlenken des traktors gabs vorne laute knack. 半导体的直接带隙和间接带隙是根据其能带结构中导带（导带底）和价带（价带顶）在动量空间（k空间）中的位置关系划分的两种类型。 换句话说，是描述电子在导带和价带之间跃迁方式的两种不同机制，他们的区别有一些几点： 1.能带结构的差异 对于直接带隙半导体来说，导带的最低能量点（导. SIGE大概是28nm以上用到的，所以28nm以上先进制程的fab厂都有这个工艺。 12.3 Si1-xGex/Si 异质结的电子学性质 SiGe 异质结器件的有源区由不同组分、厚度和掺杂的应变层组成。层的组分决定着带隙及与其相邻层的能带带阶，其大小和极性决定着量子阱深度或势垒高度，这在器件设计中起着重要作用。 12.3.1 Si 1-x Ge x 应变层的带隙和能带结构 半导体的能带结构决定着它的电子.
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